to ? 220f 1. base 2. collect or 3. emitter jiangsu changjiang elec tron ics technology co., ltd to -220f plastic-encapsulate transistors KTA1659A transistor (p np) features z high t ransition frequency z high voltage applications z complementary to ktc4370a maximum ratings (t a =25 unless otherw ise noted) electrical characteristics (t a =25 unless otherw ise specified) parameter symbol test conditions min typ max unit collecto r-base breakdown voltage v (br)cb o i c =- 100a,i e =0 -180 v collecto r-emitter breakdown voltage v (br)ce o i c =- 10ma,i b =0 -180 v emitter-ba se breakdown voltage v (br )ebo i e =-1m a,i c =0 -5 v collecto r cut-off current i cbo v cb =- 160v,i e =0 -1 a emitter cut-off current i ebo v eb =-5v ,i c =0 -1 a dc curr ent gain h fe v ce =-5v , i c =- 100ma 70 240 collecto r-emitter saturation voltage v ce(sa t) i c =- 500ma,i b =- 50ma -1.5 v base-emitter vo ltage v be v ce =-5v , i c =- 500ma -1 v collecto r output capacitance c ob v cb =- 10v,i e =0, f=1mhz 30 pf tr ansition frequency f t v ce =- 10v,i c =- 100ma 100 mhz classification of h fe ran k o y ran ge 70-140 120-240 symbol paramete r value unit v cbo collector-bas e voltage -180 v v ceo collector-emitter v oltage -180 v v ebo emitter-base vo ltage -5 v i c collector curr ent -1.5 a p c collector po wer dissipation 2 w r ja thermal resist ance from junction to ambient 62.5 / w t j junction temperature 150 t stg st orage temperature -55~+150 www.cj-elec.com 1 d , may ,201 6 1 3 2
-0.1 -1 -1 0 1 10 100 1000 10000 -0 - 200 -400 -600 -800 -1000 -1200 -0.1 -1 -10 -100 -1000 0 25 50 75 100 125 150 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 -1 - 10 -100 -1000 -0 -200 -400 -600 -800 -1000 -1200 -1400 -1600 -1 -1 0 -100 -1000 -10 -100 -1000 -1 - 10 -100 -1000 1 10 100 1000 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 -0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 capacitance c ( pf) reverse volt age v (v) c ob c ib f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ?? -30 t a =1 0 0 t a =2 5 collcetor current i c (ma) base-em miter voltage v be (mv) i c v be comm on emitter v ce =-5v collect or power dissipation p c (mw) p c ?? t a -1500 -1500 -1500 -1500 ?? base-emit ter saturation voltage v besat (mv) collector current i c (ma) =10 t a =100 t a =25 i c v be sat ?? collector-emitter saturation volt age v ces at (mv) collector current i c (ma) i c v ce sat ?? t a =100 t a =25 =10 dc current gain h fe collector current i c (ma) comm on emitter v ce =-5v t a =25 t a =100 i c h fe ?? -2ma -1.8 ma -1.6 ma -1.4 ma -1.2 ma -1ma -0.8 ma -0.6 ma -0.4 ma i b =-0. 2ma collector current i c (a) collector-emitter voltage v ce (v) co mmon emitter t a =25 st atic characteristic ambient temperature t a ( ) www.cj-elec.com 2 d , may ,201 6 ty pical characteristics
www.cj-elec.com 3 d , may ,201 6 to-220f package outline dimensions min. ma x . min. max. a 4.300 4.700 0.169 0.185 a1 a2 2.800 3.200 0.110 0.126 a3 2.500 2.900 0.098 0.114 b 0.500 0.750 0.020 0.030 b1 1.100 1.350 0.043 0.053 b2 1.500 1.750 0.059 0.069 c 0.500 0.750 0.020 0.030 d 9.960 10.360 0.392 0.408 e 14.800 15.200 0.583 0.598 e f h 0.000 0.300 0.000 0.012 h1 h2 l 28.000 28.400 1.102 1.118 l1 1.700 1.900 0.067 0.075 l2 0.900 1.100 0.035 0.043 2.700 ref. 3.500 ref. 0.138 ref. 0.106 ref. 0.800 ref. 0.500 ref. 0.031 ref. 0.020 ref. symbol dimensions in millimeters dimensions in inches 2.540 typ. 0.100 typ. 1.300 ref. 0.051 ref.
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